Vertical Slit Transistor Based Integrated Circuits (VeSTICs): Overview and Highlights of Feasibility Study

نویسنده

  • Wojciech Maly
چکیده

In this note, the concept of Vertical Slit Transistor Based Integrated Circuits (VeSTICs) is introduced and its feasibility discussed. VeSTICs paradigm has been conceived in response to the rapidly growing complexity/cost of the traditional bulk-CMOS-based approach and to challenges posed by the nano-scale era. This paradigm is based on strictly regular layouts. The central element of the proposed vision is a new junctionless Vertical Slit Field Effect Transistor (JL VeSFET) with twin independent gates. It is expected that VeSTICs will enable much denser, much easier to design, test and manufacture ICs, as well as, will be 3Dextendable and OPC-free.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantum modeling of light absorption in graphene based photo-transistors

Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...

متن کامل

Switched-Capacitor Dynamic Threshold PMOS (SC-DTPMOS) Transistor for High Speed Sub-threshold Applications

This work studies the effects of dynamic threshold design techniques on the speed and power of digital circuits. A new dynamic threshold transistor structure has been proposed to improve performances of digital circuits. The proposed switched-capacitor dynamic threshold PMOS (SC-DTPMOS) scheme employs a capacitor along with an NMOS switch in order to effectively reduce the threshold voltage of ...

متن کامل

Vertical SiGe Epitaxial Growth System

OVERVIEW: The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. The SiGe (silicon germanium)-HBT (hetero-junction bipolar transistor) can realize high-speed operation, low noise, and low power consumption, therefore, its expected application to radio frequency IC communication devices is predicted to grow rap...

متن کامل

Performance Analysis of Reversible Sequential Circuits Based on Carbon NanoTube Field Effect Transistors (CNTFETs)

This study presents the importance of reversible logic in designing of high performance and low power consumption digital circuits. In our research, the various forms of sequential reversible circuits such as D, T, SR and JK flip-flops are investigated based on carbon nanotube field-effect transistors. All reversible flip-flops are simulated in two voltages, 0.3 and 0.5 Volt. Our results show t...

متن کامل

Performance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014